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SeekIC No. : 004130940 Detail

APTM100U13SG: MOSFET N-CH 1000V 65A J3

APTM100U13SG Data Sheet

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Part Number:: APTM100U13SG
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/23

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Product Details

Quick Details

Series:	-	Manufacturer:	Microsemi Power Products Group
FET Type:	MOSFET N-Channel, Metal Oxide	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	1000V (1kV)	Current - Continuous Drain (Id) @ 25° C:	65A
Rds On (Max) @ Id, Vgs:	145 mOhm @ 32.5A, 10V	Vgs(th) (Max) @ Id:	4V @ 10mA
Gate Charge (Qg) @ Vgs:	2000nC @ 10V	Input Capacitance (Ciss) @ Vds:	31600pF @ 25V
Package / Case :	PGBA-516	Power - Max:	1250W
Mounting Type:	Chassis Mount	Package / Case:	J3 Module
Supplier Device Package:	Module

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Drain to Source Voltage (Vdss): 1000V (1kV)
Packaging: Bulk
Vgs(th) (Max) @ Id: 4V @ 10mA
Power - Max: 1250W
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25° C: 65A
Gate Charge (Qg) @ Vgs: 2000nC @ 10V
Supplier Device Package: Module
Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds: 31600pF @ 25V
Package / Case: J3 Module

Parameters:

Technical/Catalog Information	APTM100U13SG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	65A
Rds On (Max) @ Id, Vgs	145 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds	31600pF @ 25V
Power - Max	1250W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	2000nC @ 10V
Package / Case	J3 Module
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTM100U13SG APTM100U13SG

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APTM100U13SG

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