APTM10DAM02G, US $ 96.02-96.02, APTM10DAM02G DataSheet download, circuit diagram from SeekIC.com

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APTM10DAM02G: MOSFET N-CH 100V 495A SP6

APTM10DAM02G Data Sheet

US $ 96.02~96.02 / Piece | Get Latest Price

Part Number:: APTM10DAM02G
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Supply Ability:: 5000

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Product Details

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Series:	-	Manufacturer:	Microsemi Power Products Group
FET Type:	MOSFET N-Channel, Metal Oxide	FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V	Current - Continuous Drain (Id) @ 25° C:	495A
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 200A, 10V	Vgs(th) (Max) @ Id:	4V @ 10mA
Gate Charge (Qg) @ Vgs:	1360nC @ 10V	Input Capacitance (Ciss) @ Vds:	40000pF @ 25V
Power - Max:	1250W	Package / Case :	PGBA-516
Mounting Type:	Chassis Mount	Package / Case:	SP6
Supplier Device Package:	SP6

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Packaging: Bulk
Current - Continuous Drain (Id) @ 25° C: 495A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) @ Vds: 40000pF @ 25V
Power - Max: 1250W
Package / Case: SP6
Supplier Device Package: SP6

Parameters:

Technical/Catalog Information	APTM10DAM02G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	495A
Rds On (Max) @ Id, Vgs	2.5 mOhm @ 200A, 10V
Input Capacitance (Ciss) @ Vds	40000pF @ 25V
Power - Max	1250W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	1360nC @ 10V
Package / Case	SP6
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTM10DAM02G APTM10DAM02G

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