APTM10DDAM09T3G

Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Packaging: Bulk
Gate Charge (Qg) @ Vgs: 350nC @ 10V
Package / Case: SP3
Supplier Device Package: SP3
Power - Max: 390W
FET Type: 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25° C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Input Capacitance (Ciss) @ Vds: 9875pF @ 25V


Features:

• Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration


Application

• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction


Specifications

VCES	Collector - Emitter Breakdown Voltage		100	V
ID	Continuous Collector Current	TC = 25°C	139	A
		TC = 80°C	100 *
IDM	Pulsed Collector Current		430
VGS	Gate Emitter Voltage		±30	V
RBSOA	Reverse Bias Safe Operating Area		10	mΩ
PD	Maximum Power Dissipation	TC = 25°C	390	W
IAR	Avalanche current (repetitive and non repetitive)		100	A
EAR	Repetitive Avalanche Energy		50	mJ
EAS	Single Pulse Avalanche Energy		3000

Parameters:

Technical/Catalog Information	APTM10DDAM09T3G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTM10DDAM09T3G APTM10DDAM09T3G