APTM10DDAM19T3G

Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Packaging: Bulk
Current - Continuous Drain (Id) @ 25° C: 70A
Gate Charge (Qg) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds: 5100pF @ 25V
Power - Max: 208W
Package / Case: SP3
Supplier Device Package: SP3
FET Type: 2 N-Channel (Dual)


Features:

• Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration


Application

• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction


Specifications

VCES	Collector - Emitter Breakdown Voltage		100	V
ID	Continuous Collector Current	TC = 25°C	70	A
		TC = 80°C	50
IDM	Pulsed Collector Current		300
VGS	Gate Emitter Voltage		±30	V
RBSOA	Reverse Bias Safe Operating Area		21	mΩ
PD	Maximum Power Dissipation	TC = 25°C	208	W
IAR	Avalanche current (repetitive and non repetitive)		75	A
EAR	Repetitive Avalanche Energy		30	mJ
EAS	Single Pulse Avalanche Energy		1500

Parameters:

Technical/Catalog Information	APTM10DDAM19T3G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTM10DDAM19T3G APTM10DDAM19T3G