APTM10HM05FG

Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Input Capacitance (Ciss) @ Vds: 20000pF @ 25V
Manufacturer: Microsemi Power Products Group
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Package / Case: SP6
Supplier Device Package: SP6
Power - Max: 780W
Vgs(th) (Max) @ Id: 4V @ 5mA
Current - Continuous Drain (Id) @ 25° C: 278A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
Gate Charge (Qg) @ Vgs: 700nC @ 10V


Features:

• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration


Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control


Specifications

Symbol	Parameter		Max ratings	UNIT
VDSS	Drain-Source Voltage		100	Volts
ID	Continuous Drain Current @ TC = 25°C	Tc = 25°C	278	Amps
		Tc = 80°C	207
IDM	Pulsed Drain Current 1		1100	Amps
VGS	Gate-Source Voltage Continuous		±30	Volts
RDSON	Gate-Source Voltage Transient		5	Volts
PD	Linear Derating Factor	Tc = 25°C	780	W/°C
LAR	Avalanche Current 1 (Repetitive and Non-Repetitive)		100	Amps
EAR	Repetitive Avalanche Energy 1		50	mJ
EAS	Single Pulse Avalanche Energy 4		3000	mJ