APTM10HM09FTG

Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 4V @ 2.5mA
FET Type: 4 N-Channel (H-Bridge)
Package / Case: SP4
Supplier Device Package: SP4
Packaging: Bulk
Gate Charge (Qg) @ Vgs: 350nC @ 10V
Power - Max: 390W
Current - Continuous Drain (Id) @ 25° C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Input Capacitance (Ciss) @ Vds: 9875pF @ 25V


Features:

• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration


Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control


Specifications

Symbol	Parameter		Max ratings	UNIT
VDSS	Drain-Source Voltage		100	Volts
ID	Continuous Drain Current @ TC = 25°C	Tc = 25°C	139	Amps
		Tc = 80°C	100
IDM	Pulsed Drain Current 1		430	Amps
VGS	Gate-Source Voltage Continuous		±30	Volts
RDSON	Gate-Source Voltage Transient		10	Volts
PD	Linear Derating Factor	Tc = 25°C	390	W/°C
LAR	Avalanche Current 1 (Repetitive and Non-Repetitive)		100	Amps
EAR	Repetitive Avalanche Energy 1		50	mJ
EAS	Single Pulse Avalanche Energy 4		3000	mJ