APTM120TA57FPG

MOSFET MOD TRPL PHASE LEG SP6-P

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SeekIC No. : 004130749 Detail

APTM120TA57FPG: MOSFET MOD TRPL PHASE LEG SP6-P

floor Price/Ceiling Price

US $ 132.48~132.48 / Piece | Get Latest Price
Part Number:
APTM120TA57FPG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $132.48
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: 6 N-Channel (3-Phase Leg) FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25° C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) @ Vds: 5155pF @ 25V
Power - Max: 390W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: SP6
Supplier Device Package: SP6-P    

Description

Series: -
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Packaging: Bulk
Package / Case: SP6
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C: 17A
Input Capacitance (Ciss) @ Vds: 5155pF @ 25V
Power - Max: 390W
FET Type: 6 N-Channel (3-Phase Leg)
Supplier Device Package: SP6-P
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Gate Charge (Qg) @ Vgs: 187nC @ 10V


Features:

• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration



Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control



Specifications

Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1200 V
ID Continuous Drain Current Tc = 25°C
Tc = 80°C
17
13
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
68
±30
684
V
mΩ
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
22
50
3000
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com


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