APTM20HM08FG

Series: -
FET Feature: Standard
Mounting Type: Chassis Mount
Drain to Source Voltage (Vdss): 200V
Manufacturer: Microsemi Power Products Group
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Package / Case: SP6
Supplier Device Package: SP6
Gate Charge (Qg) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Input Capacitance (Ciss) @ Vds: 14400pF @ 25V
Power - Max: 781W
Current - Continuous Drain (Id) @ 25° C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V


Features:

• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integrati


Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control


Specifications

Symbol	Parameter		Max ratings	UNIT
VDSS	Drain-Source Voltage		200	Volts
ID	Continuous Drain Current @ TC = 25°C	Tc = 25°C	208	Amps
		Tc = 80°C	155
IDM	Pulsed Drain Current 1		832	Amps
VGS	Gate-Source Voltage Continuous		±30	Volts
RDSON	Gate-Source Voltage Transient		10	Volts
PD	Linear Derating Factor	Tc = 25°C	781	W/°C
LAR	Avalanche Current 1 (Repetitive and Non-Repetitive)		100	Amps
EAR	Repetitive Avalanche Energy 1		50	mJ
EAS	Single Pulse Avalanche Energy 4		3000	mJ

Parameters:

Technical/Catalog Information	APTM20HM08FG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTM20HM08FG APTM20HM08FG