Features: Low DC Power ConsumptionNon-Reflective High Isolation (40 dB @ 1 GHz)Specifications Characteristic Value RF Input Power 2 W > 500 MHz 0/-8 V 0.5 W @ 50 MHz 0/-8 V Control Voltage +0.2 V, -8 V Operating...
AS002M2-12: Features: Low DC Power ConsumptionNon-Reflective High Isolation (40 dB @ 1 GHz)Specifications Characteristic Value RF Input Power 2 W > 500 MHz 0/-...
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Features: Low Insertion Loss (0.5 dB @ 0.9 GHz) High Isolation (35 dB @ 0.9 GHz) Low Power T/R Sw...
Features: Low DC Power Consumption Low Insertion Loss, Reflective, Short 7 Lead Hermetic PackageC...
Low DC Power Consumption
Non-Reflective
High Isolation (40 dB @ 1 GHz)
Characteristic | Value |
RF Input Power | 2 W > 500 MHz 0/-8 V 0.5 W @ 50 MHz 0/-8 V |
Control Voltage | +0.2 V, -8 V |
Operating Temperature | -40°C to +85°C |
Storage Temperature | -65°C to +150°C |
JC | 25°C/W |
The AS002M2-12 is a low cost IC FET SPDT non-reflective switch in a plastic SOIC-8 package.The switch operates with -5, 0 V or 0, +5 V when 'floated'as shown on the following page.This general purpose SPDT switch is used in various telecommunications applications.