AS6VA5128

Features: ` AS6UA5128` IntelliwattTMactive power circuitry` Industrial and commercial temperature ranges available` Organization: 524,288 words * 8 bits`2.7V to 3.3V at 55 ns`Low power consumption: ACTIVE- 132 mW at 3.3V and 55 ns`Low power consumption: STANDBY- 66W max at 3.3V` 1.2V data retentio...

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SeekIC No. : 004288418 Detail

AS6VA5128: Features: ` AS6UA5128` IntelliwattTMactive power circuitry` Industrial and commercial temperature ranges available` Organization: 524,288 words * 8 bits`2.7V to 3.3V at 55 ns`Low power consumption: ...

floor Price/Ceiling Price

Part Number:
AS6VA5128
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/7

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Product Details

Description



Features:

` AS6UA5128
` IntelliwattTMactive power circuitry
` Industrial and commercial temperature ranges available
` Organization: 524,288 words * 8 bits
`2.7V to 3.3V at 55 ns
`Low power consumption: ACTIVE
- 132 mW at 3.3V and 55 ns
`Low power consumption: STANDBY
- 66W max at 3.3V
` 1.2V data retention
` Equal access and cycle times
` Easy memory expansion with CS, OE inputs
` Smallest footprint packages
- 36(48)-ball FBGA
- 32-pin TSOP I and TSOP II packages are available on Alliance AS6UB5128 product family (available January 2001)
` ESD protection 2000 volts
` Latch-up current 200 mA
 


Specifications

Parameter Device Symbol Min Max Unit
Voltage on VCC relative to VSS VtIN -0.5 VCC+ 0.5 V
Voltage on any I/O pin relative to GND VtI/O 0.5 V
Power dissipation PD 1.0 W
Storage temperature (plastic) Tstg 65 +150
Temperature with VCCapplied
Tbias 55 +125
DC output current (low) IOUT 20 mA



Description

The AS6VA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words * 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.


Equal address access of AS6VA5128 and cycle times (tAA , t RC , tWC  ) of 55 ns are ideal for low-power applications. Active high and low  chip selects (CS) permit easy memory expansion with multiple-bank memory systems.


When CS is high, AS6VA5128 enters standby mode: the AS6VA5128 is guaranteed not to exceed 66 W power consumption at 3.3V and 55 ns. The device also returns data when VCC is reduced to 1.5V for even lower power consumption.


A write cycle is accomplished by asserting write enable (WE) and chip select (CS) low. Data on the input pins I/O1I/O8 is written on the rising edge of WE (write cycle 1) or CS (write cycle 2). To avoid bus contention, external devices of AS6VA5128 should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).


A read cycle of AS6VA5128 is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip drives I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.


All chip inputs and outputs are CMOS-compatible, and operation is from a single 2.7V to 3.3V supply. AS6VA5128 is available in the JEDEC standard 36(48)-ball FBGA package.




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