MFG:ALLIANCE Package Cooled:N/A D/C:09+
MFG: ALLIANCE
Package Cooled: N/A
D/C: 09+
Description: The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,07...
The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA , t RC , tWC ) of 10/12/15/20 ns with output enable access times (tOE ) of 5/6/7/8 ns are ideal for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
When CE1 is high or CE2 is low, the devices enter standby mode. If inputs are still toggling, the device will consume I power. If the bus is SB static, then full standby power is reached (I ). For example, the AS7C1024B is guaranteed not to exceed 55mW under nominal full standby SB1 conditions.
A write cycle is accomplished by asserting write enable (WE ) and both chip enables (CE1, CE2). Data on the input pins I/O0 through I/O7 is written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE ).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE ) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable is inactive, output enable is inactive, or write enable is active,output drivers stay in high-impedance mode.
| Parameter | Symbol | Min | Max | Unit |
| Voltage on VCC relative to GND | Vt1 | -0.50 | +70 | V |
| Voltage on any I/O pin relative to GND | Vt2 | 0.50 | VCC+ 0.50 | V |
| Power dissipation | PD | 1.0 | W | |
| Storage temperature (plastic) | Tstg | 65 | +150 | |
| Temperature with VCC applied |
Tbias | 55 | +125 | |
| DC output current (low) | IOUT | 20 | mA |
` Industrial and commercial temperatures
`Organization: 131,072 words x 8 bits
` High speed
- 10/12/15/20 ns address access time
- 5/6/7/8 ns output enable access time
`Low power consumption: ACTIVE
- 605 mW / max @ 10 ns
` Low power consumption: STANDBY
- 55 mW / max CMOS
` 6T 0.18u CMOS technology
` Easy memory expansion withCE1, CE2, OE inputs
` TTL/LVTTL-compatible, three-state I/O
` 32-pin JEDEC standard packages
- 300 mil SOJ
- 400 mil SOJ
- 8 * 20mm TSOP 1
- 8 x 13.4mm sTSOP 1
` ESD protection 2000 volts
`Latch-up current 200 mA
AS7C1024B-15TI
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TheAS7C1024A and AS7C31024A is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as131,072 words x8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. ...
The AS7C1024 and AS7C31024 are high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM)devices organized as 131,072 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Eq...
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