MFG:ALLIANCE Package Cooled:N/A D/C:09+
MFG: ALLIANCE
Package Cooled: N/A
D/C: 09+
Description: The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices orga...
The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 3/3/4/5 ns are ideal for high-performance applications.The chip enable input CE permits easy memory and expansion with multiple-bank memory systems.
When CE is high the devices enter stanby mode. The AS7C1025A is guaranteed not to exceed 55 mW power consumption in CMOS standby mode. The devices also offer 2.0V data retention.
A write cycle is accomplished by asserting write enable (WE ) and chip enable (CE). Data on the input pins I/O0I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE ) or write enable (WE ).
A read cycle is accomplished by asserting output enable (OE ) and chip enable (CE), with write enable (WE ) high. the chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply (AS7C1025A) or 3.3V supply (AS7C31025A). The AS7C1025A and AS7C31025A are packaged in common industry standard packages.
| Parameter | Device | Symbol | Min | Max | Unit |
| Voltage on VCC relative to GND | AS7C1025A | Vt1 | -0.50 | +7.0 | V |
| AS7C31025A | Vt1 | 0.50 | +5.0 | V | |
| Voltage on any I/O pin relative to GND | Vt2 | 0.50 | VCC+ 0.50 | V | |
| Power dissipation | PD | 1.0 | W | ||
| Storage temperature (plastic) | Tstg | 65 | +150 | ||
| Temperature with VCC applied |
Tbias | 55 | +125 | ||
| DC output current (low) | IOUT | 20 | mA | ||
` AS7C1025A (5V version)
` AS7C31025A (3.3V version)
` Industrial and commercial temperatures
` Organization:131,027 words x8 bits
`High speed
- 10/12/15/20 ns address access time
- 3, 3, 4, 5 ns output enable access time
` Low power consumption: ACTIVE
- 660 mW (AS7C1025) / max @ 10ns(5V)
- 324mW (AS7C31025) / max @ 10ns(3.3V)
` Low power consumption: STANDBY
- 55 mW (AS7C1025) / max CMOS(5V)
- 36mW (AS7C31025) / max CMOS(3.3V)
`Latest 6T 0.25u CMOS technology
` 2.0V data retention
` Easy memory expansion with CE , OE inputs
` TTL/LVTTL-compatible, three-state I/O
` JEDEC standard packaging
- 32-pin 300 mil SOJ
- 32-pin 400 mil SOJ
- 32-pin, TSOP II
` ESD protection 2000 volts
`Latch-up current 200 mA
AS7C1025A-20TJI
PDF/DataSheet Download
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