Position: Home > Datasheet list > AS7 Series > Index A > AS7C25512PFS36A
Electronica China

Purchase AS7C25512PFS36A, In-stock AS7C25512PFS36A From SeekIC.

 

AS7C25512PFS36A Product Image

AS7 Series Datasheet download

Five Points

Part Number: AS7C25512PFS36A

 

 

 

 

Description: The AS7C25512PFS32A/36A is a high-performance CMOS 16-Mbit synchronous Static Random Access Memory (SR...


Urgent Purchase

AS7C25512PFS36A General Description


The AS7C25512PFS32A/36A is a high-performance CMOS 16-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words x 32/36. It incorporates a two-stage register-register pipeline for highest frequency on any given technology.

Fast cycle times of 6/7.5 ns with clock access times (tCD) of 3.5/3.8 ns enable 166 MHz and 133 MHz bus frequencies. Three chip enable (CE) inputs permit easy memory expansion. Burst operation is initiated in one of two ways: the controller address strobe (ADSC), or the processor address strobe (ADSP). The burst advance pin (ADV) allows subsequent internally generated burst addresses.

Read cycles are initiated with ADSP (regardless of WE and ADSC) using the new external address clocked into the on-chip address register when ADSP is sampled low, the chip enables are sampled active, and the output buffer is enabled with OE. In a read operation, the data accessed by the current address registered in the address registers by the positive edge of CLK are carried to the data-out registers and driven on the output pins on the next positive edge of CLK. ADV is ignored on the clock edge that samples ADSP asserted, but is sampled on all subsequent clock edges. Address is incremented internally for the next access of the burst when ADV is sampled low and both address strobes are high. Burst mode is selectable with theLBOinput. With LBO unconnected or driven high, burst operations use an interleaved count sequence. WithLBOdriven low, the device uses a linear count sequence.

Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable GWE writes all 18 bits regardless of the state of individual BW[a,b]inputs. Alternately, when GWE is high, one or more bytes may be written by asserting BWE and the appropriate individual byte BWn signals.

BWn is ignored on the clock edge that samples ADSP low, but it is sampled on all subsequent clock edges. Output buffers are disabled when BWnis sampled LOW regardless of OE. Data is clocked into the data input register when BWn is sampled low. Address is incremented internally to the next burst address if BWn and ADV are sampled low. This device operates in doublecycle deselect feature during read cycles.

Read or write cycles may also be initiated with ADSC instead of ADSP. The differences between cycles initiated withADSCand ADSP are as follows:

• ADSP must be sampled high when ADSC is sampled low to initiate a cycle with ADSC.

•WE signals are sampled on the clock edge that samples ADSClow (and ADSP high).

•Master chip enable CE0 blocks ADSP, but not ADSC.

The AS7C25512PFS32A/36A family operates from a core 2.5V power supply. These devices are available in a 100-pin TQFP package.

AS7C25512PFS36A Maximum Ratings

Parameter Symbol Min Max Unit
Power supply voltage relative to GND VDD, VDDQ 0.3 +3.6 V
Input voltage relative to GND (input pins) VIN 0.3 VDD + 0.3 V
Input voltage relative to GND (I/O pins) VIN 0.3 VDDQ + 0.3 V
Power dissipation Pd 1.8 W
Short circuit output current IOUT 20 mA
Storage temperature Tstg 65 +150
Temperature under bias Tbias 65 +135

Stresses greater than those listed under "Absolute maximum ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratingconditions may affect reliability.

AS7C25512PFS36A Features

• Organization: 524,288 words × 32 or 36 bits
• Fast clock speeds to 166 MHz
• Fast clock to data access: 3.5/3.8 ns
• Fast OE access time: 3.5/3.8 ns
• Fully synchronous register-to-register operation
• Single-cycle deselect
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
• Multiple chip enables for easy expansion
• 2.5V core power supply
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs

AS7C25512PFS36A Connection Diagram

AS7C25512PFS36A  Connection Diagram

AS7C25512PFS36A datasheet

AS7C25512PFS36A
PDF/DataSheet Download

Find AS7C25512PFS36A Suppliers

  • ·AS705
  • ALSC [Alliance Semiconductor Corporation] 
  • Low Power uP Supervisor Circuits 
  • 203495 KB
  • AS705 Datasheet Download
  • ·AS737D
  • Sumida Corporation 
  • Transponder TX antenna 
  • 217909 KB
  • AS737D Datasheet Download
  • ·AS7510DI
  • AD [Analog Devices] 
  • Di CMOS Protected Analog Switches 
  • 2560744 KB
  • AS7510DI Datasheet Download
  • ·AS7510DIKN
  • AD [Analog Devices] 
  • Di CMOS Protected Analog Switches 
  • 2560744 KB
  • AS7510DIKN Datasheet Download
  • ·AS7510DIKP
  • AD [Analog Devices] 
  • Di CMOS Protected Analog Switches 
  • 2560744 KB
  • AS7510DIKP Datasheet Download
  • ·AS7510DIKQ
  • AD [Analog Devices] 
  • Di CMOS Protected Analog Switches 
  • 2560744 KB
  • AS7510DIKQ Datasheet Download
  • ·AS7510DISE
  • AD [Analog Devices] 
  • Di CMOS Protected Analog Switches 
  • 2560744 KB
  • AS7510DISE Datasheet Download
  • ·AS7510DISQ
  • AD [Analog Devices] 
  • Di CMOS Protected Analog Switches 
  • 2560744 KB
  • AS7510DISQ Datasheet Download

AS7C25512PFS36A Relative Products

  • AS7C25512PFS32A

    AS7C25512PFS32A

    The AS7C25512PFS32A/36A is a high-performance CMOS 16-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words x 32/36. It incorporates a two-stage register-register pipeline for highest frequency on any given technology.Fast cyc...

  • AS7C25512PFD36A

    AS7C25512PFD36A

  • AS7C25512PFD32A

    AS7C25512PFD32A

  • AS7C25512NTF36A

    AS7C25512NTF36A

    The AS7C25512NTF32A/36A family is a high performance CMOS 16 Mbit synchronous Static Random Access Memory (SRAM) organized as 524,288 words × 32 or 36 bits and incorporates a LATE Write.This variation of the 16Mb+ synchronous SRAM uses the No Turnaround Dela...

  • AS7C25512NTF32A

    AS7C25512NTF32A

    The AS7C25512NTF32A/36A family is a high performance CMOS 16 Mbit synchronous Static Random Access Memory (SRAM) organized as 524,288 words × 32 or 36 bits and incorporates a LATE Write.This variation of the 16Mb+ synchronous SRAM uses the No Turnaround Dela...

  • AS7C25512NTD36A

    AS7C25512NTD36A

Hotspot Suppliers Product

  • Models: KCS057QV1AJ-G39
Price: 0.1-1 USD

    KCS057QV1AJ-G39

    Price: 0.1-1 USD

    KCS057QV1AJ-G39, Kyocera LCD

  • Models: MT9075BL
Price: 0.1-100 USD

    MT9075BL

    Price: 0.1-100 USD

    Single Chip Transceiver, QFP, 20 dB LIU dynamic range, -0.3 to 7 V Supply Voltage, 30 mA Current

  • Models: XC62FP4502MR
Price: 0.2-0.5 USD

    XC62FP4502MR

    Price: 0.2-0.5 USD

    XC62FP4502MR Torex Semiconductor 250mA positive voltage regulator, output 4.5V, tolerance 2%

  • Models: ADM208AN
Price: 0.1-3 USD

    ADM208AN

    Price: 0.1-3 USD

    line driver/receiver, DIP, –0.3 V to +6 V

  • Models: P80C552EBA
Price: 3-5 USD

    P80C552EBA

    Price: 3-5 USD

    Single-chip 8-bit microcontroller, PLCC68, On-chip watchdog timer, ROM code protection

  • Models: C2905
Price: 5-15 USD

    C2905

    Price: 5-15 USD

    silicon NPN, epitaxial planar type transistor, SMD, more than 20:1 load VSWR, 35v

  • Models: EKMM181VSN122MA30S
Price: 0.01-100 USD

    EKMM181VSN122MA30S

    Price: 0.01-100 USD

    large capacitance, aluminum electrolytic capacitor, 1200 uF, 180 V, Non solvent-proof type

  • Models: 56579-0576
Price: 0.2-0.5 USD

    56579-0576

    Price: 0.2-0.5 USD

    Molex USB Connectors, 0.8 mm, Copper Alloy, 1 A, 100 MOhms

  • Models: MRF314
Price: 18-20 USD

    MRF314

    Price: 18-20 USD

    RF POWER TRANSISTORS NPN SILICON MRF314

  • Models: f4-75r12ks4
Price: 95-143 USD

    f4-75r12ks4

    Price: 95-143 USD

    IGBT-Module, 2.00V forward voltage, 43A reverse recovery current, 4.50μC recovered charge

  • Models: MG150Q2YS40
Price: 54-55 USD

    MG150Q2YS40

    Price: 54-55 USD

    GTR module, 1200 V, 1100 W, enhancement-mode, high input impedance

  • Models: SN74LVC1G32DBVR
Price: 0.1-1 USD

    SN74LVC1G32DBVR

    Price: 0.1-1 USD

    positive-OR gate, SOT, -0.5 V to 6.5 V

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All