AS7C32096A

Features: • Industrial and commercial temperature• Organization: 262,144 words * 8 bits• Center power and ground pins• High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time• Low power consumption: ACTIVE - 650 mW / max @ 10 ns• L...

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AS7C32096A Picture
SeekIC No. : 004288479 Detail

AS7C32096A: Features: • Industrial and commercial temperature• Organization: 262,144 words * 8 bits• Center power and ground pins• High speed - 10/12/15/20 ns address access time - 4/5/6...

floor Price/Ceiling Price

Part Number:
AS7C32096A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

• Industrial and commercial temperature
• Organization: 262,144 words * 8 bits
• Center power and ground pins
• High speed
   - 10/12/15/20 ns address access time
   - 4/5/6/7 ns output enable access time
• Low power consumption: ACTIVE
   - 650 mW / max @ 10 ns
• Low power consumption: STANDBY
   - 28.8 mW / max CMOS
• Equal access and cycle times
• Easy memory expansion with CEOE inputs
• TTL-compatible, three-state I/O
• JEDEC standard packages
   - 44-pin TSOP 2
• ESD protection 2000 volts
• Latch-up current 200 mA



Pinout

  Connection Diagram


Specifications

Parameter Symbol Min
Max
Unit
Voltage on VCC relative to GND Vt1 -0.5
+0.5
V
Voltage on any pin relative to GND Vt2 -0.5
VCC +0.5
V
Power dissipation PD -
1.0
W
Storage temperature (plastic) Tstg -65
+150
Temperature with VCC applied Tbias -55
+125
DC current into output (low) IOUT -
20
mA

NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The AS7C32096A is a high-performance CMOS 2,097,152-bit Static Random Access Memory (SRAM) device organized as 262,144 words * 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access of AS7C32096A and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.

When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power  onsumption in CMOS standby mode.

A write cycle of AS7C32096A is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1I/O8 is written on the rising edge of WE (write cycle 1) orCE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).

A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip of AS7C32096A drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.

All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3V supply voltage. AS7C32096A is available as per industry standard 44-pin TSOP 2 package




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