AS7C33512FT32A1

The AS7C33512FT32A is a high-performance CMOS 16-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words x 32/36.The AS7C33512FT32A family operates from a core 3.3V power supply. I/Os use a separate power supply thatAS7C33512FT32A1  can operate at 2.5V or 3.3V. These devices are available in 100-pin TQFP package.

Features of the AS7C33512FT32A are:(1)Organization: 524,288 words * 32 or 36 bits;(2)Fast clock to data access: 7.5/8.5/10 ns;(3)Fast OE access time: 3.5/4.0 ns;(4)Fully synchronous flow-through operation;(5)Asynchronous output enable control;(6)Available in 100-pin TQFP packages;(7)Individual byte write and global write;(8)Multiple chip enables for easy expansion;(9)3.3V core power supply;(10)2.5V or 3.3V I/O operation with separate V_DDQ;(11)Linear or interleaved burst control;(12)Snooze mode for reduced power-standby;(13)Common data inputs and data outputs.

The absolute maximum ratings of the AS7C33512FT32A can be summarized as:(1)Power supply voltage relative to GND,V_DD, V_DDQ:-0.5V to +4.6V;(2)Input voltage relative to GND (input pins),V_IN:-0.5V to (V_DD+0.5)V;(3)Input voltage relative to GND (I/O pins),V_IN:-0.5V to (V_DDQ+0.5)V;(4)Power dissipation,P_d:1.8W;(5)Short circuit output current,I_OUT:20mA;(6)Storage temperature,T_stg:-65 to +150;(7)Temperature under bias,T_bias:-65 to +135.Stresses greater than those listed under "Absolute maximum ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso- lute maximum rating conditions may affect reliability.

If you want to know more information such as the electrical characteristics about the AS7C33512FT32A, please download the datasheet in www.seekic.com or www.chinaicmart.com .