Purchase AS7C3364NTF32B-80TQCN, In-stock AS7C3364NTF32B-80TQCN From SeekIC.
Part Number: AS7C3364NTF32B-80TQCN
Description: The AS7C3364NTF32B/36B family is a high performance CMOS 2 Mbit synchronous Static Random Access Memory (SRAM) or...
- Table of contents:
AS7C3364NTF32B-80TQCN
-
Suppliers
DataSheet
General Description
AS7C3364NTF32B-80TQCN General Description
The AS7C3364NTF32B/36B family is a high performance CMOS 2 Mbit synchronous Static Random Access Memory (SRAM) organized as 65,536 words × 32 or 36 bits and incorporates a LATE Write.
This variation of the 2Mb+ synchronous SRAM uses the No Turnaround Delay (NTD™) architecture, featuring an enhanced write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data, command, and address are all applied to the device on the same clock edge. If a read command follows this write command, the system must wait for one dead cycle for valid data to become available. This dead cycle can significantly reduce overall bandwidth for applications requiring random access or read-modify write operations.
AS7C3364NTF32B-80TQCN Maximum Ratings
| Parameter | Symbol | Min | Max | Unit |
| Power supply voltage relative to GND | VDD, VDDQ | 0.5 | +4.6 | V |
| Input voltage relative to GND (input pins) | VIN | 0.5 | VDD + 0.5 | V |
| Input voltage relative to GND (I/O pins) | VIN | 0.5 | VDDQ + 0.5 | V |
| Power dissipation | Pd | 1.8 | W | |
| Short circuit output current | IOUT | 20 | mA | |
| Storage temperature | Tstg | 65 | +150 | |
| Temperature under bias | Tbias | 65 | +135 |
AS7C3364NTF32B-80TQCN Features
• Organization: 65,536 words × 32 or 36 bits
•NTD™architecture for efficient bus operation
• Fast clock to data access: 7.5/8.0/10.0 ns
•Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
•NTD™architecture for efficient bus operation
• Fast clock to data access: 7.5/8.0/10.0 ns
•Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
AS7C3364NTF32B-80TQCN Connection Diagram
AS7C3364NTF32B-80TQCN
PDF/DataSheet Download
- Datasheet: AS7C3364NTF32B-80TQCN
- File Size: 428320 KB
- Manufacturer: ALSC [Alliance Semiconductor Corporation]
- Click here to Download
- ·AS705
- ALSC [Alliance Semiconductor Corporation]
- Low Power uP Supervisor Circuits
- 203495 KB
- ·AS737D
- Sumida Corporation
- Transponder TX antenna
- 217909 KB
- ·AS7510DI
- AD [Analog Devices]
- Di CMOS Protected Analog Switches
- 2560744 KB
- ·AS7510DIKN
- AD [Analog Devices]
- Di CMOS Protected Analog Switches
- 2560744 KB
- ·AS7510DIKP
- AD [Analog Devices]
- Di CMOS Protected Analog Switches
- 2560744 KB
- ·AS7510DIKQ
- AD [Analog Devices]
- Di CMOS Protected Analog Switches
- 2560744 KB
- ·AS7510DISE
- AD [Analog Devices]
- Di CMOS Protected Analog Switches
- 2560744 KB
- ·AS7510DISQ
- AD [Analog Devices]
- Di CMOS Protected Analog Switches
- 2560744 KB
AS7C3364NTF32B-80TQCN Relative Products
AS7C3364NTF32B
The AS7C3364NTF32B/36B family is a high performance CMOS 2 Mbit synchronous Static Random Access Memory (SRAM) organized as 65,536 words × 32 or 36 bits and incorporates a LATE Write. This variation of the 2Mb+ synchronous SRAM uses the No Turnaround Delay ...
AS7C3364NTD36B
AS7C3364NTD32B
AS7C3364FT36B
The AS7C3364FT32B/36B is a high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM device organized as 131,072 words × 32 or 36 bits. Fast cycle times of 7.5/8.5/10/12 ns with clock access times (tCD) of 6.5/7.5/8.0/10 ns. Three chip enabl...
AS7C3364FT32B
The AS7C3364FT32B/36B is a high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM device organized as 131,072 words × 32 or 36 bits. Fast cycle times of 7.5/8.5/10/12 ns with clock access times (tCD) of 6.5/7.5/8.0/10 ns. Three chip enabl...
AS7C33515FT18A
The AS7C33512FT18A is a high-performance CMOS 8-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words * 18 bits.The AS7C33512FT18A family operates from a core 3.3V power supply. I/Os use a separate power supply that can operat...
Hotspot Suppliers Product
UPW1C472MHD
Price: 0.33-0.45 USD
4700μF, 16V , 20%, Nichicon aluminum electrolytic capacitor, 0.018 Ω
LWP473
Price: 0.2-0.5 USD
Hyper-Bright LED, white SMT package, InGaN
PCM1801U
Price: 1-1.5 USD
16-Bit, Audio Analog-To-Digital Converter, 93dB, SNR Stereo, SOIC-14, 5V, 48k
74HC574D
Price: 0.1-0.2 USD
high-speed Si-gate CMOS device, SOIC-20, 6 V, 3-State, 8-bit, low power Schottky TTL
TDA4856
Price: 1-5 USD
high performance, efficient solution, DIP32, -0.5 to +16 V, -10 to +10 mA, 15 to 130 kHz
OP482GS-REEL
Price: 1.6-1.8 USD
IC OPAMP JFET 4MHZ QUAD 14SOIC - OP482GS-REEL
SI4431ADY-T1-E3
Price: 0.35-0.5 USD
P-Channel, 30-V, (D-S) MOSFET, SO-8, TrenchFET Power MOSFET, -30V Drain-Source Voltage
GM1601-LF-CF
Price: 6-10 USD
high-resolution display controller, BGA, 60Hz
MHW7182
Price: 1-5 USD
MHW7182, 18 dB, 750MHz, CATV AMPLIFIERS, Motorola
ON4973
Price: 0.049-0.123 USD
NPN 9 GHz wideband transistor
VHE-212S
Price: 0.065-0.08 USD
VHE-212S, SOT-143, Vicor
P89C662HBA
Price: 1-10 USD
8-bit, Flash microcontroller, 80C51 CPU, 12 clocks, Fully static operation, Four 8-bit I/O ports, ...
