AS7C4096

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words * 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (t_AA, t_RC, t_WC) of 10/12/15/20 ns with output enable access times (t_OE) of 5/6/7/8 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.

When CE is high the device enters standby mode. The AS7C4096/AS7C34096 is guaranteed not to exceed 110/72 mW power consumption in CMOS standby mode.

A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1I/O8 is
written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/ O pins only after outputs have been disabled with output enable (OE) or write enable (WE).

A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.

All chip inputs and outputs are TTL-compatible, and operation is from either a single 5V(AS7C4096) or 3.3V AS7C34096) supply. Both devices are available in the JEDEC standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.