ASB0130 Selling Leads, Price trend, ASB0130 DataSheet download, circuit diagram from SeekIC.com

Features: IO=100mA VR = 30V - Designed for mounting on small surface. - Extremely thin package. - Low capacitance. - Majority carrier conduction - Lead-free deviceSpecifications Symbol Parameter Conditions Min Typ Max Unit VRRM Repetitive peak reverse voltage - - 35 V...

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SeekIC No. : 004288652 Detail

ASB0130: Features: IO=100mA VR = 30V - Designed for mounting on small surface. - Extremely thin package. - Low capacitance. - Majority carrier conduction - Lead-free deviceSpecifications Symbol Paramet...

ASB0130 Data Sheet

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Part Number:: ASB0130
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/26

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Recent History
What is this?

ASB0230 evaluate
Features: IO=200mA VR = 30V - Designed for mounting on small surface. - Extremely thin package. - ...
ASB0240 evaluate
Features: IO=200mA VR=40V - Designed for mounting on small surface. - Extremely thin package. - Lo...
ASB0520 evaluate
Features: IO=500mA VR = 20V - Designed for mounting on small surface. - Extremely thin package. - ...

Product Details

Description

Features:

I_O=100mA
V_R = 30V
- Designed for mounting on small surface.
- Extremely thin package.
- Low capacitance.
- Majority carrier conduction
- Lead-free device

Specifications

Symbol	Parameter		Conditions	Min	Typ	Max	Unit
V_RRM	Repetitive peak reverse voltage			-	-	35	V
V_R	Reverse voltage			-	-	30	V
I_O	Average forward current			-	-	100	mA
I_FSM	Forward current, surge peak	0603	8.3ms single half sine-wave superimposed on rate load (JEDEC method)	-	1000	-	mA
I_FSM	Forward current, surge peak	1005		-	1000	-	mA
P_D	Power Dissipation mW	0603		-	-	150	mW
P_D	Power Dissipation mW	1005		-	-	250	mW
T_STG	Storage temperature			-40	-	+125
T_J	Junction temperature			-40	-	+125

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ASB0130

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