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MFG:ASI
Part Number: ASI2010
MFG: ASI
Description: The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
- Table of contents:
ASI2010
-
Suppliers
DataSheet
General Description
ASI2010 General Description
The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
ASI2010 Maximum Ratings
| IC | 1.5A |
| Vcc | 35V |
PDISS |
35 W @ TC = 25 °C |
| TJ |
-65 °C to +200 °C |
| TSTG | -65 °C to +200 °C |
| JC |
5.0°C/W |
ASI2010 Features
·PG = 5 dB min. at 10 W/ 2,000 MHz
·Hermetic Microstrip Package
·OmnigoldTM Metalization System
ASI2010
PDF/DataSheet Download
- Datasheet: ASI2010
- File Size: 18727 KB
- Manufacturer: ASI [Advanced Semiconductor]
- Click here to Download
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- ASI [Advanced Semiconductor]
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- ·ASI1002
- ASI [Advanced Semiconductor]
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- ·ASI1005
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- 18607 KB
- ·ASI1010
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- ·ASI1020
- ASI [Advanced Semiconductor]
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- 18757 KB
- ·ASI10430
- ASI [Advanced Semiconductor]
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- 18851 KB
- ·ASI10466
- ASI [Advanced Semiconductor]
- NPN RF POWER TRANSISTOR
- 21247 KB
- ·ASI10467
- ASI [Advanced Semiconductor]
- NPN SILICON RF POWER TRANSISTOR
- 13034 KB
ASI2010 Relative Products
ASI2005
The ASI2005 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
ASI2003
The ASI 2003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
ASI2001
The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
ASI1N415E
The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
ASI1N23WE
The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
ASI10845
The VFT15-12 is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz.
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