AT-31011

Hewlett-Packard's AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been opti-mized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets.
The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances.

Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery ope-rated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS hand-sets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled
with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard's 10 GHz f_T, 30 GHz fmax Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent
device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment tech-niques, and gold metalization in the fabrication of these devices.