Features: • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation• 900 MHz Performance:1.1 dB NF, 14.5 dB G A• Characterized for End-of-Life Battery Use (2.7 V)• SOT-363 (SC-70) Plastic Package• Tape-and-Reel Packaging Option Available [...
AT-32063: Features: • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation• 900 MHz Performance:1.1 dB NF, 14.5 dB G A• Characterized for End-of-Life Battery ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
Units |
Absolute Maximum |
VEBO |
Emitter-Base Voltage |
V |
1.5 |
VCBO |
Collector-Base Voltage |
V |
11 |
VCEO |
Collector-Emitter Voltage |
V |
5.5 |
IC |
Collector Current |
mA |
40 |
PT |
Power Dissipation [2,3] |
mW |
150 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to 150 |
The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363
package is an industry standard plastic surface mount package.
The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor AT-32063 yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields a
transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents.
Optimized performance at 2.7 V makes AT-32063 ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an Surface Mount Package SOT-363 (SC-70) Pin Connections and
LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a 2.7 V, 5 mA bias, with noise performance being relatively insensitive to
input match. High gain capability at 1 V, 1 mA makes this device a good fit for 900 MHz pager applications. Voltage breakdowns of AT-32063 are high enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard's 10 GHz f t , 30 GHz fmax Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent
device uniformity, performance of AT-32063 and reliability are produced by the use of ion-implantation,selfalignment techniques, and gold metallization in the fabrication of these devices.