AT-36408-TR1

The AT-36408-TR1 is designed as one kind of 4.8V NPN common emitter output power transistor for GSM class IV phones. It combines internal input prematching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. Typical applications include output power device for GSM class IV handsets.

AT-36408-TR1 has five features. (1)4.8 volt pulsed operation (pulse width=577msec, duty cycle=12.5%). (2)+35.0dBm Pout at 900MHz, typ. (3)65% collector efficiency at 900MHz typ. (4)9dB power gain at 900MHz, typ. (5)Internal input pre-matching facilitates cascading. Those are all the main features.

Some absolute maximum ratings have been concluded into several points of AT-36408-TR1 as follow. (1)Its emitter to base voltage would be 1.4V. (2)Its collector to base voltage would be 16V. (3)Its collector to emitter voltage would be 9.5V. (4)Its collector current would be 1.7A. (5)Its peak power dissipation would be 8.6W. (6)Its junction temperature would be 150°C. (7)Its storage temperature range would be from -65°C to 150°C.AT-36408-TR1 should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of AT-36408-TR1 are concluded as follow. (1)Its output power would be min 34dBm and typ 35dBm. (2)Its collector efficiency would be min 55% and typ 65%. (3)Its 2nd harmonic would be typ -50dBc. (4)Its 3rd harmonic would be typ -40dBc. (5)Its mismatch tolerance no damage would be max 7:1. (6)Its emitter to base breakdown voltage would be min 1.4V. (7)Its collector to base breakdown voltage would be min 16V. (8)Its collector to emitter breakdown voltage would be min 9.5V. (9)Its collector leakage current would be max 50uA. (10)Its forward current trasfer ratio would be min 80 and typ 150 and max 330. And so on. If you have any question or suggestion or want to know more information zbout AT-36408-TR1 please contact us for details. Thank you!