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MFG:HOSONIC  D/C:03+  

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Part Number: AT-38

 

MFG: HOSONIC

 

D/C: 03+

 

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AT-38 Connection Diagram

AT-38_39_310

AT-38 datasheet

AT-38086
PDF/DataSheet Download

Find AT-38 Suppliers

  • ·AT-100
  • HIROSE [Hirose Electric] 
  • Fixed Attenuators (SMA Type) 
  • 66507 KB
  • AT-100 Datasheet Download
  • ·AT-1000
  • HIROSE [Hirose Electric] 
  • High Power Fixed Attenuators (Radiator built-in) 
  • 50128 KB
  • AT-1000 Datasheet Download
  • ·AT-1001
  • HIROSE [Hirose Electric] 
  • High Power Fixed Attenuators (Radiator built-in) 
  • 50128 KB
  • AT-1001 Datasheet Download
  • ·AT-1002
  • HIROSE [Hirose Electric] 
  • High Power Fixed Attenuators (Radiator built-in) 
  • 50128 KB
  • AT-1002 Datasheet Download
  • ·AT-1003
  • HIROSE [Hirose Electric] 
  • High Power Fixed Attenuators (Radiator built-in) 
  • 50128 KB
  • AT-1003 Datasheet Download
  • ·AT-1006
  • HIROSE [Hirose Electric] 
  • High Power Fixed Attenuators (Radiator built-in) 
  • 50128 KB
  • AT-1006 Datasheet Download
  • ·AT-101
  • HIROSE [Hirose Electric] 
  • Fixed Attenuators (SMA Type) 
  • 66507 KB
  • AT-101 Datasheet Download
  • ·AT-1010
  • HIROSE [Hirose Electric] 
  • High Power Fixed Attenuators (Radiator built-in) 
  • 50128 KB
  • AT-1010 Datasheet Download

AT-38 Relative Products

  • AT-36408-TR1

    AT-36408-TR1

    The AT-36408-TR1 is designed as one kind of 4.8V NPN common emitter output power transistor for GSM class IV phones. It combines internal input prematching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic packag...

  • AT-36408

    AT-36408

    Hewlett Packard's AT-36408 combines internal input prematching with low cost,NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 vol...

  • AT-358

    AT-358

    Parameter Absolute Maximum1 Max. Input Power 0.05 GHz 0.5 2.0 GHzBias VoltageControl VoltageOperating TemperatureStorage Temperature +27 dBm+32 dBm0.5 to +7 V-0.5 to V bias + 0.5 V55°C to +125°C65°C to +150°C

  • AT-357

    AT-357

  • AT34C02Y1-10YI-2.7

    AT34C02Y1-10YI-2.7

    IC EEPROM 2K 2.7V 100NS 8-MAP

  • AT34C02Y1-10YI-1.8

    AT34C02Y1-10YI-1.8

    IC EEPROM 2K 1.8V 100NS 8-MAP

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