AT-38086 General Description
Hewlett Packard's AT-38086 is a low cost, NPN silicon bipolar junction transistor housed in a surface mount plastic package.This device is designed for use as a pre-driver or driver device in applications for cellular and wireless com-munications markets. At 4.8 volts, the AT-38086 features +28 dBm pulsed output power, Class AB operation, and +23.5 dBm CW. Superior efficiency and gain makes the AT-38086 an excellent choice for battery powered systems.
The AT-38086 is fabricated with Hewlett Packard's 10 GHz Ft Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.
AT-38086 Features
• 4.8 Volt Pulsed (pulse width = 577 sec, duty cycle = 12.5%)/CW Operation
• +28 dBm Pulsed Pout @ 900 MHz, Typ.
• +23.5 dBm CW Pout @ 836.5 MHz, Typ.
• 60% Pulsed Collector Efficiency @ 900 MHz, Typ.
• 11 dB Pulsed Power Gain @ 900 MHz, Typ.
• -35 dBc IMD3 @ Pout of 17 dBm per tone, 900 MHz, Typ.
AT-38086 Typical Application
• Driver Amplifier for GSM and AMPS/ETACS/ 900 MHz NMT Cellular Phones
• 900 MHz ISM and Special Mobile Radio
AT-38086 Connection Diagram
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