AT-38086

Features:

• 4.8 Volt Pulsed (pulse width = 577 sec, duty cycle = 12.5%)/CW Operation
• +28 dBm Pulsed P_out @ 900 MHz, Typ.
• +23.5 dBm CW P_out @ 836.5 MHz, Typ.
• 60% Pulsed Collector Efficiency @ 900 MHz, Typ.
• 11 dB Pulsed Power Gain @ 900 MHz, Typ.
• -35 dBc IMD3 @ Pout of 17 dBm per tone, 900 MHz, Typ.



Application

• Driver Amplifier for GSM and AMPS/ETACS/ 900 MHz NMT Cellular Phones
• 900 MHz ISM and Special Mobile Radio



Pinout




Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.4
VCBO	Collector-Base Voltage	V	16.0
VCEO	Collector-Emitter Voltage	V	9.5
IC	Collector Current[2]	mA	250
IC	Collector Current[3]	mA	160
PT	Peak Power Dissipation[2, 4]	W	3.7
PT	CW Power Dissipation[3, 5]	mW	460
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett Packard's AT-38086 is a low cost, NPN silicon bipolar junction transistor housed in a surface mount plastic package.This device is designed for use as a pre-driver or driver device in applications for cellular and wireless com-munications markets. At 4.8 volts, the AT-38086 features +28 dBm pulsed output power, Class AB operation, and +23.5 dBm CW. Superior efficiency and gain makes the AT-38086 an excellent choice for battery powered systems.

The AT-38086 is fabricated with Hewlett Packard's 10 GHz Ft Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.