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Part Number: AT-42035

 

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Description: Hewlett-Packard's AT-42035 is a general purpose NPN bipolar transistor that offers excellent high fr...


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AT-42035 General Description


    Hewlett-Packard's AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron
emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF,UHF, and microwave frequencies. An optimum noise match near 50 W up to 1 GHz, makes this device easy to use as a low noise amplifier.

    The AT-42035 bipolar transistor is fabricated using Hewlett- Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.

AT-42035 Maximum Ratings

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
600
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200

AT-42035 Features

• High Output Power:
   21.0 dBm Typical P1 dB at 2.0 GHz
   20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB
   Compression:

   14.0 dB Typical G1 dB at 2.0 GHz
   9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
   1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth
   Product: 8.0 GHz Typical fT
• Cost Effective Ceramic
   Microstrip Package

AT-42035 datasheet

AT-42035
PDF/DataSheet Download

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