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MFG:Agilent  Package Cooled:Flat Pack-4P  D/C:08+  

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Part Number: AT-42085

 

MFG: Agilent

Package Cooled: Flat Pack-4P

D/C: 08+

Description: Hewlett-Packard's AT-42085 is a general purpose NPN bipolar transistor that offers excellent high fr...


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AT-42085 General Description


    Hewlett-Packard's AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.

    The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain
stage, buffer, oscillator, and mixer. An optimum noise match near 50 W up to 1 GHz, makes this device easy to use as a low noise amplifier.

    The AT-42085 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.

AT-42085 Maximum Ratings

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
 Emitter-Base Voltage
V
1.5
VCBO
 Collector-Base Voltage
V
20
VCEO
 Collector-Emitter Voltage
V
12
IC
 Collector Current
mA
80
PT
 Power Dissipation [2,3]
mW
500
Tj
 Junction Temperature
°C
150
TSTG
 Storage Temperature
°C
-65 to 150

AT-42085 Features

• High Output Power:
  20.5 dBm Typical P1 dB at 2.0 GHz
• High Gain at 1 dB
  Compression:
  14.0 dB Typical G1 dB at 2.0 GHz
• Low Noise Figure:
  2.0 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth
   Product: 8.0 GHz Typical fT
• Low Cost Plastic Package

AT-42085 datasheet

AT-42085
PDF/DataSheet Download

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Related Part Number

AT-42085 Relative Products

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