AT-42086

Features:

• High Output Power:
20.5 dBm Typical P_{1 dB} at 2.0 GHz
• High Gain at 1 dB
Compression:
13.5 dB Typical G_{1 dB} at 2.0 GHz
• Low Noise Figure:
1.9 dB Typical NF_O at 2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f_T
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available^[1]





Pinout






Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	80
PT	Power Dissipation [2,3]	mW	500
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett-Packard's AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron
emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor AT-42086 with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 W up to 1 GHz, makes this device easy to use as a low noise amplifier.

The AT-42086 bipolar transistor is fabricated using Hewlett- Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability of AT-42086 are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.