AT26F004-SU

The AT26F004-SU is a type of interface Flash memory device.It is designed for utilize in a wide range of high-volume consumer built applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT26F004-SU, with its erase granularity as small as 4 Kbytes, ma kes it suitable for data storage as well, cutting down the need for additional data storage EEPROM devices.

Features of the AT26F004-SU are:(1)single 2.7V-3.6V Supply; (2)serial peripheral interface (SPI) compatible:supports SPI modes 0 and 3; (3)33 MHz maximum clock frequency; (4)flexible, uniform erase architecture:4-Kbyte blocks,32-Kb yte blocks,64-Kbyte blocks,full chip erase; (5)optimized physical sectoring for code shadowing and code + data stora ge applications:one 16-kbyte top boot sector,two 8-Kbyte Sectors,one 32-Kbyte sector,seven 64-Kbyte sectors; (6)i ndividual sector protection for program/erase protection;(7)hardware controlled locking of protected sectors;(8)by te program architecture with sequential byte program modecapability:sequential byte program mode improves throu ghput for programming multiple bytes.

The absolute maximum ratings and DC characteristics of the AT26F004-SU can be summarized as:(1):temperature un der bias is -55°C to +125°C ;(2):storage temperature is -65°C to+150°C;(3):all input voltages(including NC Pins) with respect to ground is-0.6V to +4.1V;(4):all output voltages with respect to ground is-0.6V to VCC + 0.5V.DC char acteristics:(1):active current, program operation is 9mA typ and 12mA max when CS is VCC and VCC is Max;(2): activ e current, erase operation is 9mA typ and 12mA max when CS is VCC and VCC is Max;(3):input leakage current is 1u A when VIN is CMOS levels;(4):output leakage current is 1uA when VOUT is CMOS;(5):input low voltage us 0.3 x VCC V max;(6):output low voltage is 0.4V max when IOL is 1.6 mA and VCC is Min.etc.