Features: • Single 2.7V - 3.6V Supply• Fast Read Access Time 200 ns• Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer• Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1- to 64-byte Page Write OperationR...
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The AT28BV256 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the AT28BV256 offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 200 µA.