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Part Number: AT28HC256

 

MFG: ATMEL

 

 

Description: The AT28HC256 is a high-performance Electrically Erasable and ProgrammableRead Only Memory. Its 256K o...


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AT28HC256 General Description


The AT28HC256 is a high-performance Electrically Erasable and ProgrammableRead Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Man-ufactured with Atmel's advanced nonvolatile CMOS technology, the AT28HC256offers access times to 70 ns with power dissipation of just440 mW. When the AT28HC256 is deselected, the standbycurrent is less than 5 mA.

The AT28HC256 is accessed like a Static RAM for the reador write cycle without the need for external components.The device contains a 64-byte page register to allow writingof up to 64 bytes simultaneously. During a write cycle, theaddress and 1 to 64 bytes of data are internally latched,freeing the addresses and data bus for other operations.
Following the initiation of a write cycle, the device will auto-matically write the latched data using an internal controltimer. The end of a write cycle can be detected by DATA polling of I/O7 . Once the end of a write cycle has been
detected a new access for a read or write can begin.

Atmel's 28HC256 has additional features to ensure highquality and manufacturability. The device utilizes internal error correction for extended endurance and improved dataretention characteristics. An optional software data protec-tion mechanism is available to guard against inadvertentwrites. The device also includes an extra 64 bytes ofEEPROM for device identification or tracking.

AT28HC256 Maximum Ratings

Temperature Under Bias................................ -55 to +125
Storage Temperature..................................... -65 to +150
All Input Voltages
(including NC Pins)
with Respect to Ground..................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground...........................-0.6V to VCC  + 0.6V
Voltage on OE and A9
with Respect to Ground...................................-0.6V to +13.5V

AT28HC256 Features

Fast Read Access Time - 70 ns
Automatic Page Write Operation
   Internal Address and Data Latches for 64 Bytes
   Internal Control Timer
Fast Write Cycle Times
  Page Write Cycle Time: 3 ms or 10 ms Maximum
  1 to 64-Byte Page Write Operation
Low Power Dissipation
  80 mA Active Current
  3 mA Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
   Endurance: 104 or 105 Cycles
   Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Full Military, Commercial, and Industrial Temperature Ranges 
 

AT28HC256 Connection Diagram

AT28HC256  Connection Diagram

AT28HC256 datasheet

AT28HC256
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