AT49BN6408T

• 64-megabit (4M x 16) and 32-megabit (2M x 16) Flash Memories
• 2.7V - 3.1V Read/Write
• High Performance Asynchronous Access Time 70 ns PageModeReadTime20ns Synchronous Burst Frequency 66 MHz Configurable Burst Operation
• Sector Erase Architecture Eight 4K Word Sectors with Individual Write Lockout 32K Word Main Sectors with Individual Write Lockout
• Typical Sector Erase Time: 32K Word Sectors 500 ms; 4K Word Sectors 100 ms
• 32M, Four Plane Organization, Permitting Concurrent Read in Any of the Three Planesnot Being Programmed/Erased Memory Plane A: 4M of Memory Including Eight 4K Word Sectors Memory Plane B: 4M of Memory Consisting of 32K Word Sectors Memory Plane C: 12M of Memory Including Eight 32K Word Sectors Memory Plane D: 12M of Memory Including Eight 32K Word Sectors
• 64M, AT49BN6408(T), Four Plane Organization, Permitting Concurrent Read in Any ofthe Three Planes not Being Programmed/Erased Memory Plane A: 8M of Memory Including Eight 4K Word Sectors Memory Plane B: 24M of Memory Consisting of 32K Word Sectors Memory Plane C: 24M of Memory Consisting of 32K Word Sectors Memory Plane D: 8M of Memory Consisting of 32K Word Sectors
• 64M, AT49BN6416(T), Four Plane Organization, Permitting Concurrent Read in Any ofThree Planes not Being Programmed/Erased Memory Plane A: 16M of Memory Including Eight 4K Word Sectors Memory Plane B: 16M of Memory Consisting of 32K Word Sectors Memory Plane C: 16M of Memory Consisting of 32K Word Sectors Memory Plane D: 16M of Memory Consisting of 32K Word Sectors
• Suspend/Resume Feature for Erase and Program Supports Reading and Programming Data from Any Sector by Suspending Eraseof a Different Sector Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation30mAActive 10 µA Standby
• 1.8V I/O Option Reduces Overall System Power
• Data Polling and Toggle Bit for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• TSOP or CBGA Package
• Top or Bottom Boot Block Configuration Available

The AT49BN/BV64xx(T) and AT49BN3204(T) are 2.7-volt 64-megabit and 32-megabitFlash memories respectively. The memories are divided into multiple sectors andplanes for erase operations. The devices can be read or reprogrammed off a single2.7V power supply, making AT49BN6408T ideally suited for in-system programming. The outputvoltage can be separately controlled down to 1.65V through the VCCQ supply pin.

AT49BN6408T can be configured to operate in the asynchronous/page read (defaultmode) or burst read mode (not available for the AT49BV641(T)). The burst read modeis used to achieve a faster data rate than is possible in the asynchronous/page readmode.