AT49BV

Features:

* Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
* AccessTime70ns
* Sector Erase Architecture
Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
* Fast Word Program Time 20 s
* Fast Sector Erase Time 300 ms
* Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
* Erase Suspend Capability
Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
* Low-power Operation
30mAActive
10 A Standby
* Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
* VPP Pin for Accelerated Program/Erase Operations
* RESET Input for Device Initialization
* Sector Lockdown Support
* TSOP and CBGA Package Options
* Top or Bottom Boot Block Configuration Available
* 128-bit Protection Register


Pinout

Temperature under Bias	-55°Cto+125°C
Storage Temperature	-65°Cto+150°C
All Input Voltages (including NC Pins) with Respect to Ground	-0.6V to +6.25V
All Output Voltages with Respect to Ground	.-0.6V to VCC +0.6V
Voltage on OE and V PP with Respect to Ground	-0.6V to +13.0V

Specifications

Temperature under Bias	-55°Cto+125°C
Storage Temperature	-65°Cto+150°C
All Input Voltages (including NC Pins) with Respect to Ground	-0.6V to +6.25V
All Output Voltages with Respect to Ground	.-0.6V to V +0.6V CC
Voltage on OE and V PP with Respect to Ground	-0.6V to +13.0V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditionsforextendedperiodsmayaffectdevice reliability.

Description

The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in 48-lead TSOP and 48-ball CBGA packages. The device has CE and OE control signals to avoid any bus contention. AT49BV can be read or reprogrammed using a single 2.65V power supply, making it ideally suited for in-system programming.