AT49BV002A1V-70JI

The AT49BV002A1V-70JI is designed as one kind of 2.7-volt-only in-system reprogrammable flash memory device that organized as 262,144 words by 8 bits. And this device is erased by executing the erase command sequence; the device internally controls the erase operations.

Features of the AT49BV002A1V-70JI are:(1)Single Supply for Read and Write: 2.7 to 3.6V; (2)Fast Read Access Time 70 ns; (3)Internal Program Control and Timer; (4)Sector Architecture: One 16K Bytes Boot Block with Programming Lockout, Two 8K Bytes Parameter Blocks and Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes); (5)Fast Erase Cycle Time 4 Seconds; (6)Byte-by-Byte Programming 30 us/Byte Typical; (7)Hardware Data Protection; (8)DATA Polling for End of Program Detection; (9)Low Power Dissipation: 15 mA Active Current and 50 uA CMOS Standby Current; (10)Typical 10,000 Write Cycles; (11)Green (Pb/Halide-free) Packaging Option.

The absolute maximum ratings of the AT49BV002A1V-70JI can be summarized as:(1)Temperature under Bias: -55°C to +125°C;(2)Storage Temperature: -65°C to +150°C;(3)All Input Voltages (including NC Pins) with Respect to Ground: -0.6V to +6.25V;(4)All Output Voltages with Respect to Ground: -0.6V to VCC+0.6V;(5)Voltage on VPP with Respect to Ground: -0.6V to +13.5 V. If you want to know more information such as the electrical characteristics about the AT49BV002A1V-70JI, please download the datasheet in www.seekic.com or www.chinaicmart.com.