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Part Number: AT49BV002T
Description: The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memor...
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AT49BV002T
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DataSheet
General Description
AT49BV002T General Description
The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 mA.
AT49BV002T Maximum Ratings
| Temperature Under Bias................................ -55°C to +125°C Storage Temperature .....................................-65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE with Respect to Ground ...................................-0.6V to +13.5V |
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
AT49BV002T Features
• Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• Sector Architecture
One 16K Byte Boot Block with Programming Lockout
Two 8K Byte Parameter Blocks
Two Main Memory Blocks (96K, 128K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 ms/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
25 mA Active Current
50 mA CMOS Standby Current
• Typical 10,000 Write Cycles
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• Sector Architecture
One 16K Byte Boot Block with Programming Lockout
Two 8K Byte Parameter Blocks
Two Main Memory Blocks (96K, 128K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 ms/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
25 mA Active Current
50 mA CMOS Standby Current
• Typical 10,000 Write Cycles
AT49BV002T Connection Diagram
AT49BV002T
PDF/DataSheet Download
- Datasheet: AT49BV002T
- File Size: 175595 KB
- Manufacturer: ATMEL [ATMEL Corporation]
- Click here to Download
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