AT49BV163AT General Description
AT49BV163AT Maximum Ratings
AT49BV163AT Features
* Single Voltage Read/Write Operation: 2.65V to 3.6V
* Access Time 70 ns
* Sector Erase Architecture
Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
* Fast Word Program Time 12 s
* Fast Sector Erase Time 300 ms
* Suspend/Resume Feature for Erase and Program
Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word
* Low-power Operation
12 mA Active
13 A Standby
* Data Polling, Toggle Bit, Ready/BBusy for End of Program Detection
* VPP Pin for Write Protection
* RESET Input for Device Initialization
* Sector Lockdown Support
* TSOP and CBGA Package Options
* Top or Bottom Boot Block Configuration Available
* 128-bit Protection Register
* Minimum 100,000 Erase Cycles
* Common Flash Interface (CFI)
AT49BV163AT Connection Diagram
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