Purchase AT49BV641, In-stock AT49BV641 From SeekIC.
Part Number: AT49BV641
Description: The AT49BN/BV64xx(T) and AT49BN3204(T) are 2.7-volt 64-megabit and 32-megabitFlash memories respective...
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AT49BV641
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DataSheet
General Description
AT49BV641 General Description
The AT49BN/BV64xx(T) and AT49BN3204(T) are 2.7-volt 64-megabit and 32-megabitFlash memories respectively. The memories are divided into multiple sectors andplanes for erase operations. The devices can be read or reprogrammed off a single2.7V power supply, making them ideally suited for in-system programming. The outputvoltage can be separately controlled down to 1.65V through the VCCQ supply pin.
The devices can be configured to operate in the asynchronous/page read (defaultmode) or burst read mode (not available for the AT49BV641(T)). The burst read modeis used to achieve a faster data rate than is possible in the asynchronous/page readmode.
AT49BV641 Maximum Ratings
Temperature under Bias ............................. -55°C to +125°C
Storage Temperature ..................................-65°C to +150°C
All Input Voltages Except VPP
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
VPP Input Voltage
with Respect to Ground .........................................0V to 13.0V
All Output Voltages
with Respect to Ground ...........................-0.6V to VCCQ +0.6V
Storage Temperature ..................................-65°C to +150°C
All Input Voltages Except VPP
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
VPP Input Voltage
with Respect to Ground .........................................0V to 13.0V
All Output Voltages
with Respect to Ground ...........................-0.6V to VCCQ +0.6V
AT49BV641 Features
• 64-megabit (4M x 16) and 32-megabit (2M x 16) Flash Memories
• 2.7V - 3.1V Read/Write
• High Performance Asynchronous Access Time 70 ns PageModeReadTime20ns Synchronous Burst Frequency 66 MHz Configurable Burst Operation
• Sector Erase Architecture Eight 4K Word Sectors with Individual Write Lockout 32K Word Main Sectors with Individual Write Lockout
• Typical Sector Erase Time: 32K Word Sectors 500 ms; 4K Word Sectors 100 ms
• 32M, Four Plane Organization, Permitting Concurrent Read in Any of the Three Planesnot Being Programmed/Erased Memory Plane A: 4M of Memory Including Eight 4K Word Sectors Memory Plane B: 4M of Memory Consisting of 32K Word Sectors Memory Plane C: 12M of Memory Including Eight 32K Word Sectors Memory Plane D: 12M of Memory Including Eight 32K Word Sectors
• 64M, AT49BN6408(T), Four Plane Organization, Permitting Concurrent Read in Any ofthe Three Planes not Being Programmed/Erased Memory Plane A: 8M of Memory Including Eight 4K Word Sectors Memory Plane B: 24M of Memory Consisting of 32K Word Sectors Memory Plane C: 24M of Memory Consisting of 32K Word Sectors Memory Plane D: 8M of Memory Consisting of 32K Word Sectors
• 64M, AT49BN6416(T), Four Plane Organization, Permitting Concurrent Read in Any ofThree Planes not Being Programmed/Erased Memory Plane A: 16M of Memory Including Eight 4K Word Sectors Memory Plane B: 16M of Memory Consisting of 32K Word Sectors Memory Plane C: 16M of Memory Consisting of 32K Word Sectors Memory Plane D: 16M of Memory Consisting of 32K Word Sectors
• Suspend/Resume Feature for Erase and Program Supports Reading and Programming Data from Any Sector by Suspending Eraseof a Different Sector Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation30mAActive 10 µA Standby
• 1.8V I/O Option Reduces Overall System Power
• Data Polling and Toggle Bit for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• TSOP or CBGA Package
• Top or Bottom Boot Block Configuration Available
AT49BV641 Connection Diagram
AT49BV641
PDF/DataSheet Download
- Datasheet: AT49BV641
- File Size: 780259 KB
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