Purchase AT49F1614T, In-stock AT49F1614T From SeekIC.
Part Number: AT49F1614T
Description: The AT49F16X4(T) is a 5.0 volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes ...
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AT49F1614T
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DataSheet
General Description
AT49F1614T General Description
The AT49F16X4(T) is a 5.0 volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 blocks for erase operations. The device is offered in 48-pin TSOP and 48-ball BGA packages.
The device has CE, and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 5.0V power supply, making it ideally
AT49F1614T Maximum Ratings
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
AT49F1614T Features
* 4.5V to 5.5V Read/Write
* Access Time - 70 ns
* Sector Erase Architecture
Thirty 32K Word (64K byte) Sectors with Individual Write Lockout
Eight 4K Word (8K byte) Sectors with Individual Write Lockout
Two 16K Word (32K byte) Sectors with Individual Write Lockout
* Fast Word Program Time - 10 s
* Fast Sector Erase Time - 200 ms
* Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
Memory Plane B: Twenty-Four 32K Word Sectors
* Erase Suspend Capability
Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
* Low Power Operation
40 mA Active
10 A Standby
* Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
* RESET Input for Device Initialization
* Sector Program Unlock Command
* TSOP, CBGA, and BGA Package Options
* Top or Bottom Boot Block Configuration Available
* Access Time - 70 ns
* Sector Erase Architecture
Thirty 32K Word (64K byte) Sectors with Individual Write Lockout
Eight 4K Word (8K byte) Sectors with Individual Write Lockout
Two 16K Word (32K byte) Sectors with Individual Write Lockout
* Fast Word Program Time - 10 s
* Fast Sector Erase Time - 200 ms
* Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
Memory Plane B: Twenty-Four 32K Word Sectors
* Erase Suspend Capability
Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
* Low Power Operation
40 mA Active
10 A Standby
* Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
* RESET Input for Device Initialization
* Sector Program Unlock Command
* TSOP, CBGA, and BGA Package Options
* Top or Bottom Boot Block Configuration Available
AT49F1614T Connection Diagram
AT49F1614T-70CC
PDF/DataSheet Download
- Datasheet: AT49F1614T-70CC
- File Size: 218225 KB
- Manufacturer: ATMEL [ATMEL Corporation]
- Click here to Download
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The AT49F1614-90CC is a 5.0 volt 16-megabit flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15;the x8 data appears on I/O0 - I/O7.The memory is divided into 40 blocks for erase op...
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The AT49F16X4(T) is a 5.0 volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 blocks for erase ope...
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