AT49F2048

Features: • Single Voltage Operation 5V Read 5V Reprogramming• Fast Read Access Time - 70 ns• Internal Erase/Program Control• Sector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 8K Words (16K bytes) Parameter Blocks One 104K Words (208...

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AT49F2048 Picture
SeekIC No. : 004290369 Detail

AT49F2048: Features: • Single Voltage Operation 5V Read 5V Reprogramming• Fast Read Access Time - 70 ns• Internal Erase/Program Control• Sector Architecture One 8K Words (16K bytes)...

floor Price/Ceiling Price

Part Number:
AT49F2048
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Description



Features:

• Single Voltage Operation
   5V Read
   5V Reprogramming
• Fast Read Access Time - 70 ns
• Internal Erase/Program Control
• Sector Architecture
   One 8K Words (16K bytes) Boot Block with Programming Lockout
   Two 8K Words (16K bytes) Parameter Blocks
   One 104K Words (208K bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Word-By-Word Programming - 50 µs/Word
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
   50 mA Active Current
   300 µA CMOS Standby Current
• Typical 10,000 Write Cycles



Pinout

  Connection Diagram


Specifications

Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground ............................ -0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V



Description

The AT49F2048 is a 5-volt-only, 2 megabit Flash Memory organized as 128K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 300 µA.

To allow for simple in-system reprogrammability, the AT49F2048 does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device.  Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus connection. The AT49F2048 is a 5-voltonly, 2 megabit Flash Memory organized as 128K words contention. Reprogramming the AT49F2048 is performed by first erasing a block of data and then programming on a word-by-word basis.

AT49F2048 is erased by executing the erase command sequence; the device internally controls the erase operation. The memory is divided into three blocks for erase operations. There are two 8K word parameter block sections and one sector consisting of the boot block and the main memory array block. The AT49F2048 is programmed on a word-by-word basis.

AT49F2048 has the capability to protect the data in the boot block; this feature is enabled by a command sequence. Once the boot block programming lockout feature is enabled, the data in the boot block cannot be changed when input levels of 5.5 volts or less are used. The typical number of program and erase cycles is in excess of 10,000 cycles.

The optional 8K word boot block section of AT49F2048 includes a reprogramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is protected from being reprogrammed.




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