AT49LD3200B

Features: • 3.0V to 3.6V Read/Write• Burst Read Performance <100 MHz (RAS Latency = 2, CAS Latency = 6), 10 ns Cycle Time tSAC = 7 ns <75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time tSAC = 8 ns <50 MHz (RAS Latency = 1, CAS Latency = 4), 20 ns Cycle Time tSAC = 9 ...

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AT49LD3200B Picture
SeekIC No. : 004290398 Detail

AT49LD3200B: Features: • 3.0V to 3.6V Read/Write• Burst Read Performance <100 MHz (RAS Latency = 2, CAS Latency = 6), 10 ns Cycle Time tSAC = 7 ns <75 MHz (RAS Latency = 2, CAS Latency = 5), 13...

floor Price/Ceiling Price

Part Number:
AT49LD3200B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Description



Features:

• 3.0V to 3.6V Read/Write
• Burst Read Performance
<100 MHz (RAS Latency = 2, CAS Latency = 6), 10 ns Cycle Time tSAC = 7 ns
<75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time tSAC = 8 ns
<50 MHz (RAS Latency = 1, CAS Latency = 4), 20 ns Cycle Time tSAC = 9 ns
• MRS Cycle with Address Key Programs
RAS Latency (1 and 2)
CAS Latency (2 ~ 8)
Burst Length: 4, 8
Burst Type: Sequential and Interleaved
• Word Selectable Organization
16 (Word Mode)/x 32 (Double Word Mode)
• Sector Erase Architecture
Eight 256K Word or 128K Double Word (4-Mbit) Sectors
• Independent Asynchronous Boot Block
8K x 16 Bits with Hardware Lockout
• Fast Program Time
3-volt, 100 µs per Word/Double Word Typical
12-volt, 30 µs per Word/Double Word Typical
• Fast Sector Erase Time
2.5 Seconds at 3 Volts
1.6 Seconds at 12 Volts
• Low-power Operation
ICC Read = 75 mA Typical
• Input and Output Pin Continuity Test Mode Optimizes Off-board Programming
• Package:
86-pin TSOP Type II with Off-center Parting Line (OCPL) for Improved Reliability
• LVTTL-compatible Inputs and Outputs



Pinout

  Connection Diagram


Specifications

Temperature under Bias ................................ -55to +125
Storage Temperature ..................................... -65 to +150
All Input Voltages
(including NC Pins)
with Respect to Ground .....................................-0.6V to +4.6V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on VPP
with Respect to Ground ...................................-0.6V to +13.5V
Power Dissipation .............................................................. 1 W



Description

The AT49LD3200 or AT49LD3200B SFlash™ is a synchronous, high-bandwidth Flash memory fabricated with Atmel's high-performance CMOS process technology and is organized either as 2,097,152 x 16 bits (word mode) or as 1,048,576 x 32 bits (double word mode), depending on the polarity of the WORD pin (see Pin Function Description Table). Synchronous design allows precise cycle control. I/O transactions are possible on every clock cycle. All operations are synchronized to the rising edge of the system clock. The range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high-bandwidth, high-performance memory system applications.

The AT49LD3200B will automatically activate the Asynchronous Boot Block after power-up, whereas with the AT49LD3200, the Asynchronous Boot Block can be activated through Mode Register Set.

The synchronous DRAM interface AT49LD3200B allows designers to maximize system performance while eliminating the need to shadow slow asynchronous Flash memory into highspeed RAM.The 32-megabit SFlash device is designed to sit on the synchronous memory bus and operate alongside SDRAM.




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