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Part Number: AT59C11

 

 

 

D/C: DIP

Description: The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically Erasable Programmable Read Only Memory) o...


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AT59C11 General Description


The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically Erasable Programmable Read Only Memory) organized as 64/128/256 words of 16 bits each, when the ORG Pin is connected to VCC and 128/256/512 words of 8 bits each when it is tied to ground. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential.

The AT59C11/22/13 is available in space saving 8-pin PDIP and 8-pin EIAJ SOIC packages.

The AT59C11/22/13 is enabled through the Chip Select pin (CS), and accessed via a 4-wire serial interface consisting of Data Input (DI), Data Output (DO), and Clock (CLK). Upon receiving a READ instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO, the WRITE cycle is completely selftimed and no separate ERASE cycle is required before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE state. Ready/Busy status can be monitored upon completion of a programming operation by polling the Ready/Busy pin.

The AT59C11/22/13 is available in 5.0V ± 10%, 2.7V to 5.5V and 2.5V to 5.5V versions.

AT59C11 Maximum Ratings

Operating Temperature.................... -55°C to +125°C

Storage Temperature ...................... -65°C to +150°C

Voltage on Any Pin
with Respect to Ground ...........................-1.0V to +7.0V

Maximum Operating Voltage.................................. 6.25V

DC Output Current............................................... 5.0 mA


AT59C11 Features

• Low Voltage and Standard Voltage Operation
   5.0 (VCC = 4.5V to 5.5V)
   2.7 (VCC = 2.7V to 5.5V)
   2.5 (VCC = 2.5V to 5.5V)
• User Selectable Internal Organization
   1K: 128 x 8 or 64 x 16
   2K: 256 x 8 or 128 x 16
   4K: 512 x 8 or 256 x 16
• 4-Wire Serial Interface
• Self-Timed Write Cycle (10 ms max)
• High Reliability
   Endurance: 1 Million Write Cycles
   Data Retention: 100 Years
   ESD Protection: >4000V
• 8-Pin PDIP and 8-Pin EIAJ SOIC Packages

AT59C11 Connection Diagram

AT59C11  Connection Diagram

AT59C11 datasheet

AT59C11
PDF/DataSheet Download

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