AT60142E General Description
The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as lowconsumption, such as aeros-pace electronics, portable instruments, or embarked systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an extremely low standby supply current (Typical value = 65 µA) with a fast access time at 15 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise.
The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15(1) and 20 ns specification.
The ET(1) version is a variant allowing for 5V tolerance: it is available in 17 ns and 20ns specification.
The AT60142E/ET are processed according to the methods of the latest revision of the MIL PRF 38535 or ESA SCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
AT60142E Features
• Operating Voltage: 3.3V
• Access Time:
15 ns (Preview) for 3.3V biased only (AT60142E)
17 ns and 20 ns for 5V Tolerant (AT60142ET)
• Very Low Power Consumption
Active: 810 mW (Max) @ 15 ns
Standby: 215 µW (Typ)
• Wide Temperature Range: -55 to +125°C
• 500 Mils Width Package
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 Micron Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD Better than 4000V
AT60142E Connection Diagram
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