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AT60142FT

Features: • Operating Voltage: 3.3V• Access Time: 15 ns for 3.3V biased only (AT60142F) 17 ns for 5V Tolerant (AT60142FT)• Very Low Power Consumption Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns Standby: 3.5 mW (Typ)• Wide Temperature Range: -55 to +125°C• TTL-C...

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SeekIC No. : 004290523 Detail

AT60142FT: Features: • Operating Voltage: 3.3V• Access Time: 15 ns for 3.3V biased only (AT60142F) 17 ns for 5V Tolerant (AT60142FT)• Very Low Power Consumption Active: 650 mW (Max) @ 15 ns, ...

AT60142FT Data Sheet

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Part Number:
AT60142FT
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Operating Voltage: 3.3V
• Access Time:
15 ns for 3.3V biased only (AT60142F)
17 ns for 5V Tolerant (AT60142FT)
• Very Low Power Consumption
Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns
Standby: 3.5 mW (Typ)
• Wide Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD Better than 4000V for the AT60142F
• ESD Better than 2000V for the AT60142FT
• Quality Grades: ESCC, QML-Q or V with smd 5962-05208


Pinout

Connection Diagram


Specifications

Supply Voltage to GND Potential:.........................-0.5V + 4.6V
DC Input Voltage:...................................GND -0.5V to 4.6V(1)
DC Output Voltage High Z State: ................GND -0.5V to 4.6V
Storage Temperature: ............................. -65°C to + 150°C
Output Current Into Outputs (Low): ............................ 20 mA
Electro Statics Discharge Voltage(2):.. ........> 4000V (MIL STD
883D Method 3015.3
Note: 1. 7V for FT version.
2. For AT60142F. It is better than 2000V for AT60142FT.


Description

The AT60142F/AT60142FT are very low power CMOS static RAM organized as 524 288 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the AT60142F/FT combine an extremely low standby supply current (Typical value = 1 mA) with a fast access time at 15 ns over the full military temperature range.

The high stability of the 6T cell provides excellent protection against soft errors due to noise. The AT60142FT version is biased at 3.3 V and is not 5V tolerant: it is available to 15 ns specification.

The AT60142FT version is a variant allowing for 5V tolerance: it is available in 17 ns specification.

The AT60142F/AT60142FT are processed according to the methods of the latest revision of the MIL PRF 38535 or ESCC 9000. It is produced on a radiation hardened 0.25 µm CMOS process.




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