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ATF-13736

Features: * Low Noise Figure:1.8 dB Typical at 12 GHz* High Associated Gain:9.0 dB Typical at 12 GHz* High Output Power:17.5 dB Typical at 12 GHz* Cost Effective Ceramic Microstrip Package* Tape-and-Reel Packaging Option Available[1]Specifications Symbol Parameter Units Absolute Maximum...

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SeekIC No. : 004291170 Detail

ATF-13736: Features: * Low Noise Figure:1.8 dB Typical at 12 GHz* High Associated Gain:9.0 dB Typical at 12 GHz* High Output Power:17.5 dB Typical at 12 GHz* Cost Effective Ceramic Microstrip Package* Tape-and...

ATF-13736 Data Sheet

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Part Number:
ATF-13736
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Low Noise Figure:1.8 dB Typical at 12 GHz
* High Associated Gain:9.0 dB Typical at 12 GHz
* High Output Power:17.5 dB Typical at 12 GHz
* Cost Effective Ceramic Microstrip Package
* Tape-and-Reel Packaging Option Available[1]


Specifications

Symbol Parameter Units Absolute Maximum[1]
VDS Drain-Source Voltage V +5
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -6
IDS Drain Current mA IDSS
PT Power Dissipation [2,3] mW 225
TCH Channel Temperature °C 175
TSTG Storage Temperature[4]
 °C -65 to +175



Description

The ATF-13736 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.

This GaAs FET device ATF-13736 has a nominal 0.3 micron gate length with a total gate periphery of 250 microns.  Proven gold based metallization systems and nitride passivation assure a rugged,reliable device.




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