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ATF-21170

Features: • Low Noise Figure: 0.9 dB Typical at 4ÊGHz• High Associated Gain: 13.0ÊdB Typical at 4ÊGHz• High Output Power: 23.0ÊdBm Typical P 1 dB at 4ÊGHz• Hermetic Gold-Ceramic Microstrip PackageSpecifications Symbol Parameter Units Ab...

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SeekIC No. : 004291210 Detail

ATF-21170: Features: • Low Noise Figure: 0.9 dB Typical at 4ÊGHz• High Associated Gain: 13.0ÊdB Typical at 4ÊGHz• High Output Power: 23.0ÊdBm Typical P 1 dB at 4Ê...

ATF-21170 Data Sheet

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Part Number:
ATF-21170
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Noise Figure: 0.9 dB Typical at 4ÊGHz
• High Associated Gain: 13.0ÊdB Typical at 4ÊGHz
• High Output Power: 23.0ÊdBm Typical P 1 dB at 4ÊGHz
• Hermetic Gold-Ceramic Microstrip Package


Specifications

Symbol Parameter Units Absolute
Maximum[1]
VDS Drain Source Voltage V +7
VGS Gate Source Voltage V -4
VGD Gate-Drain Voltage V -7
ID Drain Current mA IDSS
PT Power Dissipation [2,3] mW 600
TCH Channel Temperature °C 175
TSTG Storage Temperature[4] °C -65 to +175

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4 mW/°C for TCASE > 25°C.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.




Description

The ATF-21170 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range.

This GaAs FET device ATF-21170 has a nominal 0.3 micron gate length with a total gate periphery of 750Êmicrons. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.




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