Features: • Low Noise Figure: 0.5 dB Typ. @ 2 GHz• High Output Power: 19 dBm Typ. P1dB @ 2 GHz• High MSG: 13.5 dB Typ. @ 2 GHz• Low Cost Surface Mount Plastic Package• Tape-and-Reel Packaging Option Available[1]PinoutSpecifications Symbol Parameter Absolute ...
ATF-21186: Features: • Low Noise Figure: 0.5 dB Typ. @ 2 GHz• High Output Power: 19 dBm Typ. P1dB @ 2 GHz• High MSG: 13.5 dB Typ. @ 2 GHz• Low Cost Surface Mount Plastic Package• ...
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| Symbol | Parameter | Absolute Maximum[1] | Units |
| VDS | Drain-Source Voltage | 5 | V |
| VGS | Gate-Source Voltage | -4 | V |
| VGD | Gate-Drain Voltage | -6 | V |
| PT | Drain Current | IDSS | mA |
| IDS | Power Dissipation[2,3] | 400 | mW |
| TCH | Channel Temperature | 150 | °C |
| TSTG | Storage Temperature | -65 to +150 | °C |
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TCASE = 25oC (TCASE is defined to be the temperature at the ends of pins 2 and 4 where they contact the circuit board).
3. Derate at 4.4 mW/oC for TC> 60oC.
Agilent's ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over the VHF, UHF, and microwave frequency ranges.
High gain with two volt operation makes this part ATF-21186 attractive for low voltage, battery operated systems.The low noise figure is appropriate for commercial systems demanding good sensitivity, such as GPS receiver front-ends and MMDS television receivers. The output power is sufficient for use as the driver stage in many hand-held transceivers operating in the 900 MHz through 2.4 GHz bands, including in cellular phones, PCN, and ISM band spread spectrum applications.