ATF-25570

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_{CASE TEMPERATURE} = 25°C.
3. Derate at 3.3 mW/°C for T_CASE > 40°C.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.

The ATF-25570 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a hermetic, high reliabil-ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.

This GaAs FET device ATF-25570 has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.