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ATF-26836

Features: • High Output Power: 18.0EdBm Typical P 1 dB at 12EGHz• High Gain: 9.0 dB Typical GSS at 12EGHz• Cost Effective Ceramic Microstrip Package• Tape-and-Reel Packaging Option Available[1]Specifications Symbol Parameter Units AbsoluteMaximum[1] VDS Drain S...

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SeekIC No. : 004291231 Detail

ATF-26836: Features: • High Output Power: 18.0EdBm Typical P 1 dB at 12EGHz• High Gain: 9.0 dB Typical GSS at 12EGHz• Cost Effective Ceramic Microstrip Package• Tape-and-Reel Packaging ...

ATF-26836 Data Sheet

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Part Number:
ATF-26836
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power: 18.0EdBm Typical P 1 dB at 12EGHz
• High Gain: 9.0 dB Typical GSS at 12EGHz
• Cost Effective Ceramic Microstrip Package
• Tape-and-Reel Packaging Option Available[1]


Specifications

Symbol Parameter Units Absolute
Maximum[1]
VDS Drain Source Voltage V +7
VGS Gate Source Voltage V -4
VGD Gate-Drain Voltage V -8
ID Drain Current mA IDSS
PT Power Dissipation [2,3] mW 275
TCH Channel Temperature °C 175
TSTG Storage Temperature[4] °C -65 to +175

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 2.9 mW/°C for TCASE >79°C.
4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.




Description

The ATF-26836 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16ÊGHz frequency range.

This GaAs FET device ATF-26836 has a nominal 0.3 micron gate length with a total gate periphery of 250Êmicrons. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.




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