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Part Number: ATF-26836
Description: The ATF-26836 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor hou...
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ATF-26836
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DataSheet
General Description
ATF-26836 General Description
The ATF-26836 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16ÊGHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250Êmicrons. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
ATF-26836 Maximum Ratings
| Symbol | Parameter | Units | Absolute Maximum[1] |
| VDS | Drain Source Voltage | V | +7 |
| VGS | Gate Source Voltage | V | -4 |
| VGD | Gate-Drain Voltage | V | -8 |
| ID | Drain Current | mA | IDSS |
| PT | Power Dissipation [2,3] | mW | 275 |
| TCH | Channel Temperature | °C | 175 |
| TSTG | Storage Temperature[4] | °C | -65 to +175 |
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 2.9 mW/°C for TCASE >79°C.
4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
ATF-26836 Features
• High Output Power: 18.0EdBm Typical P 1 dB at 12EGHz
• High Gain: 9.0 dB Typical GSS at 12EGHz
• Cost Effective Ceramic Microstrip Package
• Tape-and-Reel Packaging Option Available[1]
• High Gain: 9.0 dB Typical GSS at 12EGHz
• Cost Effective Ceramic Microstrip Package
• Tape-and-Reel Packaging Option Available[1]
ATF-26836
PDF/DataSheet Download
- Datasheet: ATF-26836
- File Size: 48197 KB
- Manufacturer: HP [Agilent(Hewlett-Packard)]
- Click here to Download
- ·ATF10100
- Agilent(Hewlett-Packard)
- 0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
- 44359 KB
- ·ATF-10100
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 53132 KB
- ·ATF-10100-GP3
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 53132 KB
- ·ATF10136
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF-10136
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF-10136-STR
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF-10136-TR1
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF10170
- TRANSISTOR | JFET | N-CHANNEL | 70MA I(DSS) | MICRO-X
- 97889 KB
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