The ATF28HC64B-12SI is designed as one kind of radiation hardened SRAM-based reprogrammable FPGA device that is manufactured using the ATMEL 0.18 rad-hard AT58KRHA CMOS technology. And this device offers a patented distributed 10 ns SEU hardened SRAM capabil...
The ATF280E-2E-E is designed as one kind of radiation hardened SRAM-based reprogrammable FPGA device that has been especially designed for space application by implementing hardened cells and permanent selfintegrity check mechanism. And this device offers a ...
The ATF-26884-TR1 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the...
The ATF-26836 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-1...
The ATF-25735 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequ...
The ATF-25570 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a hermetic, high reliabil-ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz fre...