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Part Number: ATF-36077

 

MFG: HP

 

D/C: 07+

Description: Hewlett-Packard's ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHE...


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ATF-36077 General Description


Hewlett-Packard's ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades.

ATF-36077 Maximum Ratings

Symbol Parameter Units Absolute
Maximum[1]
VDS Drain Source Voltage V +3
VGS Gate Source Voltage V -3
VGD Gate-Drain Voltage V -3.5
ID Drain Current mA Idss
PT Total Power Dissipation[3] mW 180
Pin max RF Input Power dBm +10
Tch Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Measured at Pdiss = 15 mW and Tch = 100°C.
3. Derate at 16.7 mW/°C for TC > 139°C.

ATF-36077 Features

• PHEMT Technology
• Ultra-Low Noise Figure:
  0.5 dB Typical at 12 GHz
  0.3 dB Typical at 4 GHz
• High Associated Gain:
  12 dB Typical at 12 GHz
  17 dB Typical at 4 GHz
• Low Parasitic Ceramic
  Microstrip Package
• Tape-and-Reel Packing
  Option Available

ATF-36077 Typical Application

• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers

ATF-36077 Connection Diagram

ATF-36077  Connection Diagram

ATF-36077 datasheet

ATF-36077
PDF/DataSheet Download

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