Features: • PHEMT Technology• Ultra-Low Noise Figure:0.5 dB Typical at 12 GHz0.3 dB Typical at 4 GHz• High Associated Gain:12 dB Typical at 12 GHz17 dB Typical at 4 GHz• Low Parasitic CeramicMicrostrip Package• Tape-and-Reel PackingOption AvailableApplication• 1...
ATF-36077: Features: • PHEMT Technology• Ultra-Low Noise Figure:0.5 dB Typical at 12 GHz0.3 dB Typical at 4 GHz• High Associated Gain:12 dB Typical at 12 GHz17 dB Typical at 4 GHz• Low ...
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Symbol | Parameter | Units | Absolute Maximum[1] |
VDS | Drain Source Voltage | V | +3 |
VGS | Gate Source Voltage | V | -3 |
VGD | Gate-Drain Voltage | V | -3.5 |
ID | Drain Current | mA | Idss |
PT | Total Power Dissipation[3] | mW | 180 |
Pin max | RF Input Power | dBm | +10 |
Tch | Channel Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to 150 |
Hewlett-Packard's ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF- 36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades.