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Part Number: ATF-46171
Description: The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium ...
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ATF-46171
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DataSheet
General Description
ATF-46171 General Description
The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5Êmicron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 1.25Êmillimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.
ATF-46171 Maximum Ratings
| Symbol | Parameter | Units | Absolute Maximum[1] |
| VDS | Drain Source Voltage | V | +14 |
| VGS | Gate Source Voltage | V | -7 |
| VGD | Gate-Drain Voltage | V | -16 |
| ID | Drain Current | mA | IDSS |
| PT | Power Dissipation [2,3] | mW | 2.0 |
| TCH | Channel Temperature | °C | 175 |
| TSTG | Storage Temperature | °C | -65 to +175 |
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 13 mW/°C for TCASE > 25°C.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
ATF-46171 Features
• High Output Power: 27.0EdBm Typical P 1 dB at 4EGHz
• High Gain at 1 dB Compression: 11.0EdB Typical G 1 dB at 4EGHz
• High Power Efficiency: 38% Typical at 4ÊGHz
• Hermetic Metal-Ceramic Stripline Package
• High Gain at 1 dB Compression: 11.0EdB Typical G 1 dB at 4EGHz
• High Power Efficiency: 38% Typical at 4ÊGHz
• Hermetic Metal-Ceramic Stripline Package
ATF-46171
PDF/DataSheet Download
- Datasheet: ATF-46171
- File Size: 45001 KB
- Manufacturer: HP [Agilent(Hewlett-Packard)]
- Click here to Download
- ·ATF10100
- Agilent(Hewlett-Packard)
- 0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
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- ·ATF-10100
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
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- ·ATF-10100-GP3
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
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- ·ATF10136
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF-10136
- HP [Agilent(Hewlett-Packard)]
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- ·ATF-10136-STR
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
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- ·ATF-10136-TR1
- HP [Agilent(Hewlett-Packard)]
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